TLSV5100 vishay semiconductors 1 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 bicolor symbol led in 2.5 x 5 mm untinted top-diffused package color type technology angle of half intensity high efficiency red TLSV5100 gaasp on gap 50 green TLSV5100 gap on gap 50 features even luminance of the emitting surface ideal as flush mounted panel indicators for dc and pulse operation color mixing possible due to separate anode terminals luminous intensity selected into groups categorized for green color wide viewing angle common cathode 96 11496 applications indicating and illumination purposes absolute maximum ratings t amb = 25 c, unless otherwise specified TLSV5100 parameter test conditions symbol value unit reverse voltage per diode v r 6 v dc forward current per diode i f 30 ma surge forward current per diode t p 10 s i fsm 1 a power dissipation per diode t amb 55 c p v 100 mw total power dissipation t amb 55 c p tot 150 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient per diode r thja 450 k/w thermal resistance junction/ambient total r thja 300 k/w
TLSV5100 vishay semiconductors 2 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( TLSV5100 ) parameter test conditions type symbol min typ max unit per diode luminous intensity 1) i f = 10 ma i v 0.63 1 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma j + 50 deg forward voltage i f = 20 ma v f 2 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 green ( TLSV5100 ) parameter test conditions type symbol min typ max unit per diode luminous intensity 1) i f = 10 ma i v 0.63 1 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma j + 50 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 9983 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 95 9984 50 figure 2. forward current vs. ambient temperature
TLSV5100 vishay semiconductors 3 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 10085 i forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 55 c figure 3. forward current vs. pulse length 0.4 0.2 0 0.2 0.4 0.6 95 10082 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 4. rel. luminous intensity vs. angular displacement 02468 0.1 1 10 100 1000 10 95 10026 v f forward voltage ( v ) i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 5. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red i f =10ma figure 6. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 7. rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10029 i relative luminous intensity v rel high efficiency red figure 8. relative luminous intensity vs. forward current
TLSV5100 vishay semiconductors 4 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 9. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10034 v f forward voltage ( v ) i forward current ( ma ) f t p /t=0.001 t p =10 s green figure 10. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10035 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) i f =10ma green figure 11. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i specific luminous intensity i f forward current ( ma ) figure 12. specific luminous intensity vs. forward current 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10037 i relative luminous intensity v rel green figure 13. relative luminous intensity vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 14. relative luminous intensity vs. wavelength
TLSV5100 vishay semiconductors 5 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 dimensions in mm 95 11327
TLSV5100 vishay semiconductors 6 (6) rev. a2, 07-sep-00 www.vishay.com document number 83052 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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